technical data npn meduim power silicon transistor qualified per mil - prf - 19500/393 devices qualified level 2n3418 2n3814s 2N3419 2N3419s 2n3420 2n3420s 2n3421 2n3421s jan jantx jantxv maximum ratings ratings symbol 2n3418, s 2n3420, s 2n 3419, s 2n3421, s unit collector - emitter voltage v ceo 60 80 vdc collector - base voltage v cbo 85 125 vdc emitter - base voltage v ebo 8.0 vdc collector current t p 1.0 ms, duty cycle 50% i c 3.0 5.0 adc total power dissipation @ t a = +25 0 c (1) @ t c = +100 0 c (2) p t 1.0 15 w w/ 0 c operating & storage temperature range t op , t stg - 65 to +200 0 c 1) derate linearly 5.72 mw/ 0 c for t a > 25 0 c 2) derate linearly 150 mw/ 0 c for t c > 100 0 c to - 5* 2n3418, 2N3419, 2n3420, 2 n3421 to - 39* (to205 - ad) 2n3418s, 2N3419s, 2n3420s, 2n3421s *see appendix a for package outline electrical characteristics characteristics symbol min. max. unit off characteristics collector - emitter breakdown current i c = 50 madc, i b = 0 2n3418 , s; 2n3420, s 2N3419, s; 2n3421, s v (br) ceo 60 80 vdc collector - emitter cutoff current v be = - 0.5 vdc, v ce = 80 v dc 2n3418, s; 2n3420, s v be = - 0.5 vdc, v ce = 120 v dc 2N3419, s; 2n3421, s i cex 0.3 0.3 m adc collector - emitter cutoff current v ce = 45 vdc, i b = 0 2n3418, s; 2n3420, s v ce = 60 vdc, i b = 0 2N3419, s; 2n3421, s i ceo 5.0 5.0 m adc emitter - base cutoff current v eb = 6.0 vdc, i c = 0 v eb = 8.0 vdc, i c = 0 i ebo 0.5 10 m adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n 3418, s, 2N3419, s, 2n3420, s, 2n3421, s, jan series electrical characteristics characteristics symbol min. max. unit on characteristics for ward - current transfer ratio i c = 100 madc, v ce = 2.0 vdc 2n3418, s; 2N3419, s 2n3420, s; 2n3421, s i c = 1.0 adc, v ce = 2.0 vdc 2n3418, s; 2N3419, s 2n3420, s; 2n3421, s i c = 2.0 adc, v ce = 2.0 vdc 2n3418, s; 2N3419, s 2n3420, s; 2n3421, s i c = 5.0 adc, v ce = 5.0 vdc 2n3418, s; 2N3419, s 2n3420, s; 2n3421, s h fe 20 40 20 40 15 30 10 15 60 120 base - emitter saturation voltage i c = 1.0 adc, i b = 0.1 adc i c = 2.0 adc, i b = 0.2 adc v be(sat) 0.6 0.7 1.2 1.4 vdc collect or - emitter saturation voltage i c = 1.0 adc, i b = 0.1 adc i c = 2.0 adc, i b = 0.2 adc v ce(sat) 0.25 0.5 vdc dynamic characteristics magnitude of common emitter small - signal short circuit forward current transfer ratio i c = 0.1 adc, v ce = 10 vdc, f = 20 mhz ? h fe ? 1.3 8.0 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 150 pf switching characteristics delay time v be(off) = - 3.7 vdc t d 0.08 m s rise time i c = 1.0 adc, i b1 = 100 madc t r 0.22 m s storage t ime v be(off) = - 3.7 vdc t s 1.10 m s fall time i c = 1.0 adc, i b2 = - 100 madc t f 0.20 m s safe operating area dc tests t c = 100 0 c, 1 cycle, t = 1.0 s test 1 v ce = 5.0 vdc, i c = 3.0 adc test 2 v ce = 37 vdc, i c = 0.4 adc test 3 v ce = 60 vdc, i c = 0.185 adc 2n3418, s; 2n3420, s v ce = 80 vdc, i c = 0.12 adc 2N3419, s; 2n3421, s clamped switching t a = 25 0 c, i b = 0.5 adc, i c = 3.0 adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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